Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to the difference in the thickness of the nonmagnetic layers. It is found that the structural asymmetry can greatly affect the traversal time and the spin polarization of the electrons tunneling through the magnetic RTD. The results indicate that, by choosing suitable values for the thickness of the layers, one can design a high speed and perfect spin-filter diode.Comment: 6 pages, 5 figure

Detection of electrical spin injection by light-emitting diodes in top- and side-emission configuration

Detection of the degree of circular polarization of the electroluminescence of a light-emitting diode fitted with a spin injecting contact (a spin-LED) allows for a direct determination of the spin polarization of the injected carriers. Here, we compare the detection efficiency of (Al,Ga)As spin-LEDs fitted with a (Zn,Be,Mn)Se spin injector in top- and side-emission configuration. In contrast with top emission, we cannot detect the electrical spin injection in side emission from analysing the degree of circular polarization of the electroluminescence. To reduce resonant optical pumping of quantum-well excitons in the side emission, we have analysed structures with mesa sizes as small as 1 micron.Comment: 15 pages with 3 figure

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.Comment: To be published in Applied Physics Letter

Spin Current in Spin-Orbit Coupling Systems

We present a simple and pedagogical derivation of the spin current as the linear response to an external electric field for both Rashba and Luttinger spin-orbital coupling Hamiltonians. Except for the adiabatic approximation, our derivation is exact to the linear order of the electric field for both models. The spin current is a direct result of the difference in occupation levels between different bands. Moreover, we show a general topological spin current can be defined for a broad class of spin-orbit coupling systems

Electrical expression of spin accumulation in ferromagnet/semiconductor structures

We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the Schottky barrier, especially the counter-intuitive spin polarization direction in the semiconductor due to current extraction seen in recent experiments. A possible explanation of this phenomenon involves taking into account the spin-dependent inelastic scattering via the bound states in the interface region. The quantum-mechanical treatment of spin transport through the interface is coupled with the semiclassical description of transport in the adjoining media, in which we take into account the in-plane spin diffusion along the interface in the planar geometry used in experiments. The theory forms the basis of the calculation of spin-dependent current flow in multi-terminal systems, consisting of a semiconductor channel with many ferromagnetic contacts attached, in which the spin accumulation created by spin injection/extraction can be efficiently sensed by electrical means. A three-terminal system can be used as a magnetic memory cell with the bit of information encoded in the magnetization of one of the contacts. Using five terminals we construct a reprogrammable logic gate, in which the logic inputs and the functionality are encoded in magnetizations of the four terminals, while the current out of the fifth one gives a result of the operation.Comment: A review to appear in Mod. Phys. Lett.

Coherently photo-induced ferromagnetism in diluted magnetic semiconductors

Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-bandgap laser radiation . The mechanism for photo-induced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature T_C depends both on the properties of the material and on the frequency and intensity of the laser and could be above 1 K.Comment: 11 pages, 2 figures, preprint styl

Probing Spin-Polarized Currents in the Quantum Hall Regime

An experiment to probe spin-polarized currents in the quantum Hall regime is suggested that takes advantage of the large Zeeman-splitting in the paramagnetic diluted magnetic semiconductor zinc manganese selenide (Zn$_{1-x}$Mn$_x$Se). In the proposed experiment spin-polarized electrons are injected by ZnMnSe-contacts into a gallium arsenide (GaAs) two-dimensional electron gas (2DEG) arranged in a Hall bar geometry. We calculated the resulting Hall resistance for this experimental setup within the framework of the Landauer-B\"uttiker formalism. These calculations predict for 100% spininjection through the ZnMnSe-contacts a Hall resistance twice as high as in the case of no spin-polarized injection of charge carriers into a 2DEG for filling factor $\nu=2$. We also investigated the influence of the equilibration of the spin-polarized electrons within the 2DEG on the Hall resistance. In addition, in our model we expect no coupling between the contact and the 2DEG for odd filling factors of the 2DEG for 100% spininjection, because of the opposite sign of the g-factors of ZnMnSe and GaAs.Comment: 7 pages, 5 figure

Electron Spin Injection at a Schottky Contact

We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy and semiconductor doping density. The effect of a spin-dependent interface resistance that results from a tunneling region at the contact/semiconductor interface is described. The model can serve as a guide for designing spin-injection experiments with regard to the interface properties and device structure.Comment: 4 pages, 4 figure

The Rashba Hamiltonian and electron transport

The Rashba Hamiltonian describes the splitting of the conduction band as a result of spin-orbit coupling in the presence of an external field and is commonly used to model the electronic structure of confined narrow-gap semiconductors. Due to the mixing of spin states some care has to be exercised in the calculation of transport properties. We derive the velocity operator for the Rashba-split conduction band and demonstrate that the transmission of an interface between a ferromagnet and a Rashba-split semiconductor does not depend on the magnetization direction, in contrast with previous assertions in the literature.Comment: one tex file, two figures; paper to appear in this form in PRB (RC

Optoelectric spin injection in semiconductor heterostructures without ferromagnet

We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination when the conduction electron momentum distribution is shifted with respect to the momentum distribution of holes in the spin split valence subbands. Spin current appears when the spin polarization is injected from the quantum well into the $n$-doped region of the $pn$ junction. The accompanied emission of circularly polarized light from the quantum well can serve as a spin polarization detector.Comment: 2 figure